Samsung confirms HBM5 will use 2nm GAA process, speed over 50% faster than HBM4E

On July 27, Samsung Electronics released an interview with Koo Ja-hyun, head of the semiconductor business unit's technology development office. Koo stated that the next-generation HBM5 memory is expected to run over 50% faster than HBM4E. The HBM5 base chip will use a 2nm GAA (Gate-All-Around) process and achieve higher-density TSV (Through Silicon Via). Samsung will leverage its experience and technical competitiveness gained from 4nm HBM4 base chips to introduce 2nm process early in HBM5. The company aims to expand customer collaboration in mobile, HBM, AI, HPC, automotive electronics, robotics, and other fields to lead the semiconductor ecosystem.